CVD Tube Furnace
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CVD Tube Furnace

1.Lab Tubular Furnace Equipment:Φ25mm-Φ100mm
2.Lab Box Furnace Equipment:1L-36L
3.Working Temperature can reach 1200℃-1700℃
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Description

Technical Parameters

CVD tube furnace,also known as Chemical Vapor Deposition Tube Furnace,is a device that uses chemical vapor deposition (CVD) technology to form thin films on material surfaces.CVD technology generates the desired thin film material by chemically reacting gaseous compounds or elements containing thin film elements on the substrate surface at high temperatures.Chemical Vapor Deposition Tube Furnace as a key equipment for implementing this technology,is widely used in fields such as materials science,nanotechnology,and semiconductor manufacturing.

 

Application field

 

Semiconductor industry: Used to deposit silicon, silicon nitride, metal oxide and other films, used to make integrated circuits, optoelectronic devices and sensors.

 

Solar cells: For the production of efficient thin film solar cells, such as CIGS (copper Indium Gallium selenium) thin film solar cells.

 

Photoelectric and display technology: used for deposition of photoelectric materials such as LED manufacturing and OLED display screens.

 
 

Coating technology: Used for metal, glass, ceramics and other substrate protective coating, such as anti-corrosion coating, anti-wear coating.

 

Hard coating: Hard material deposition for tools, molds, cutting tools, etc., to improve its wear resistance and service life.

 

CVD Tube Furnace | Shaanxi Achieve chem-tech
CVD Tube Furnace | Shaanxi Achieve chem-tech
CVD Tube Furnace | Shaanxi Achieve chem-tech
Parameter

product-1442-625

 

product-886-651

 

Distinguish

Chemical Vapor Deposition Tube Furnace,also known as Chemical Vapor Deposition Tube Furnace,is a widely used heat treatment equipment in the fields of materials science and engineering.Compared to other types of tube furnaces,Chemical Vapor Deposition Tube Furnaces have significant differences in design and application.Some of the differences will be explored in detail from multiple dimensions.

 
Definition and Function
 
01/

Chemical Vapor Deposition Tube Furnace:
Mainly used for the growth and deposition of materials.It prepares thin films,nanoparticles,and other advanced materials by delivering a gas mixture into the furnace,which decomposes at high temperatures and produces atoms or molecules that deposit on a solid substrate.CVD technology is widely used in various industries such as semiconductors,nanoelectronics,optoelectronic engineering,coatings,etc.

02/

Other tubular furnaces:
Other types,such as vacuum tube furnaces,atmosphere tube furnaces,high-temperature mini tube furnaces,etc.,are mainly used for baking and sintering materials.These tube furnaces typically consist of a tubular ceramic vessel containing a heat source (such as electric heating rods,fiber lasers,etc.),which can be used for sintering and baking materials such as ceramics,glass,and metals.They have great flexibility in temperature and heating methods,and are widely used in experiments and small-scale production in colleges,research institutes,industrial and mining enterprises.

 
Structure and Composition
 
01/

Chemical Vapor Deposition Tube Furnace:
It usually consists of sedimentation temperature control,sedimentation reaction chamber,vacuum control components,and gas source control spare parts.The furnace body often adopts a double-layer furnace shell structure,with fans installed between the double-layer furnace shells to achieve rapid temperature rise and fall,and the surface temperature of the furnace shell is low.Furnace tubes are often made of high-purity materials (such as high-purity corundum tubes),and both ends are sealed with stainless steel high vacuum flanges to ensure airtightness and high temperature resistance.In addition,Chemical Vapor Deposition Tube Furnaces are equipped with precise gas flow control systems (such as manual float flow meters or high-precision mass flow meters) to meet the process requirements of different protective atmospheres.

02/

Other tubular furnaces:
Relatively simple in structure,it usually only includes a tubular ceramic vessel with a heat source inside,as well as necessary temperature and atmosphere control systems.The design of these tube furnaces places greater emphasis on practicality and economy to meet the needs of different materials and processes.

 
Temperature control and application scope
 
01/

Chemical Vapor Deposition Tube Furnace:
The temperature control system is usually controlled by imported multi-stage intelligent program temperature controllers,which have good stability and repeatability in temperature control.This enables precise control of the furnace temperature to meet the needs of different materials and processes.At the same time,it has a wide range of applications and can be used to prepare various thin film materials (such as metal thin films,semiconductor thin films,optical thin films,etc.),nanomaterials (such as carbon nanotubes,graphene,etc.),as well as key processes such as wafer cleaning and surface treatment.

02/

Other tubular furnaces:
In terms of temperature control,it may be relatively simple,usually adjusted using PID method,and multiple temperature rise and fall programs can be set.The application scope of these tube furnaces mainly focuses on baking and sintering materials,such as powder baking,ceramic sintering,high-temperature experiments,etc.Although they also have certain temperature and atmosphere control capabilities,their control accuracy and application range may be limited compared to Chemical Vapor Deposition Tube Furnaces.

 
Gas control and reaction atmosphere
 
01/

Chemical Vapor Deposition Tube Furnce:
The gas control system is one of its key components.By precisely controlling the type,concentration,and flow rate of the reaction gas,thin film materials with specific compositions and structures can be prepared.Meanwhile,inert gas or protective gas can be introduced as needed to control the reaction atmosphere and prevent material oxidation.This precise gas control capability gives it significant advantages in the preparation of high-quality thin film materials.

02/

Other tubular furnaces:
In terms of gas control,it may be relatively simple.They usually only provide basic atmosphere control systems for controlling the type and pressure of atmosphere inside the furnce.Although these tube furnaces can also carry out certain chemical reactions by introducing reaction gases,their gas control accuracy and flexibility may not be as good as Chemical Vapor Deposition Tube Furnaces.

 
Operation and maintenance
 
01/

Chemical Vapor Deposition Tube Furnace:
The operation is relatively complex and requires operators to possess certain professional knowledge and operational skills.Meanwhile,due to its complex and precise structure,it also requires high technical requirements in terms of maintenance.In order to ensure the normal operation and prolong the service life of the equipment,it is necessary to regularly maintain and upkeep the equipment.

02/

Other tubular furnaces:
Relatively simple in terms of operation and maintenance.Due to their relatively simple structural design and strong practicality,operators can more easily master their operating methods and maintenance skills.These tube furnacs typically have a longer service life and lower maintenance costs.

 
Application Fields and Development Prospects
 
01/

Chemical Vapor Deposition Tube Furnce:
It has broad application prospects in high-tech fields such as semiconductors,nanoelectronics,and optoelectronic engineering.With the continuous development and progress of technology,the demand for high-quality thin film materials and nanomaterials in these fields will continue to increase.Therefore,as an important material preparation equipment,its market demand will continue to grow.Meanwhile,with the continuous innovation and upgrading of technology,performance and efficiency will also continue to improve,making greater contributions to the development of materials science and engineering fields.

02/

Other tubular furnaes:
It has wide application value in baking and sintering materials.They can be applied to multiple industries and fields,such as the processing and production of materials such as ceramics,glass,and metals.Although these tube furnces may not have as much market share as Chemical Vapor Deposition Tube Furnacs,they still hold an irreplaceable position and role in specific fields and applications.

In summary,there are significant differences between Chemical Vapor Deposition Tube Furnaces and other types of tube furnacs in terms of definition and function,structure and composition,temperature control and application scope,gas control and reaction atmosphere,as well as operation and maintenance.These differences make Chemical Vapor Deposition Tube Furnacs have unique application value and broad development prospects in the fields of materials science and engineering.

 

Introduce

CVD tube furnace,also known as chemical vapor deposition tube furnce,is a crucial heat treatment equipment in the fields of materials science and engineering.Its principle of action is mainly based on chemical vapor phase reaction,which deposits atoms or molecules in the gas onto a solid substrate under high temperature and specific atmospheric conditions,thereby achieving the preparation of thin films or nanoparticles.The following is a detailed explanation of the working principle of Chemical Vapor Deposition Tube Furnce:

► Basic principles

Chemical Vapor Deposition Tube Furnces utilize chemical vapor phase reactions to decompose gas mixtures at high temperatures,producing atoms or molecules that deposit on solid substrates to form the desired thin films or nanomaterials.This process requires certain reaction conditions,including appropriate temperature,types and concentrations of reaction gases,and reaction time.

► Key components and functions

Reaction source:

The Chemical Vapor Deposition Tube Furnace contains raw materials,which can be in solid,gas,or liquid form.By heating in the furnce,the raw materials are heated and undergo chemical reactions.

Transport system:

Gas transport pipelines transport raw materials from the reaction source to the furnac chamber.This system ensures a stable supply and uniform distribution of reaction gases.

Reaction chamber:

The Chemical Vapor Deposition Tube Furnac is equipped with a reaction chamber,which is the main area where chemical reactions occur.By adjusting the internal temperature and atmosphere,the reaction process and deposition rate can be controlled.

Base and substrate:

Suitable bases and substrates are installed inside the furnace cavity to support and maintain the stability of the material.The choice of substrate material has a significant impact on the quality and performance of the sediment.

► Heating and temperature control

Chemical Vapor Deposition Tube Furnacs are typically equipped with efficient heating systems such as resistance heaters,induction heaters,or radiation heaters.These heaters convert electrical or other energy sources into thermal energy,creating a high-temperature environment.The heat generated by the heating system is conducted through the furnace wall to the interior of the furnce,gradually increasing the temperature inside the furace.At the same time,the gas and substrate materials inside the furnce also absorb heat through thermal convection and radiation,achieving overall heating.In order to ensure the smooth progress of chemical reactions and the quality of deposits,Chemical Vapor Deposition Tube Furaces are usually equipped with precise temperature control systems.The system can monitor the temperature inside the furnace in real time and automatically adjust it according to the preset heating curve to maintain a constant temperature environment.

► Gas flow rate and atmosphere control

In addition to temperature control,gas flow rate is also one of the important factors affecting CVD reaction.Therefore,the unit is also equipped with a gas flow control system to precisely control the flow and proportion of the reaction gas.The system ensures a stable supply and uniform distribution of the reaction gas,thereby improving the quality and performance of the sediment.At the same time,by adjusting the type and concentration of reaction gas,thin films or nanomaterials with different compositions and structures can be prepared.

► Chemical reactions and sedimentation processes

Under high temperature conditions,one or more reaction gases fed into the reaction chamber are activated.Activation methods may include direct heating,plasma excitation,or firelight radiation.These activation methods enhance the chemical activity of the reaction gas,making it easier for chemical reactions to occur.The activated reaction gas undergoes a chemical reaction on the surface of the substrate material,generating solid deposits.These sediments continuously accumulate on the substrate surface,ultimately forming the required thin film or coating.

Fabrication of MOSFET gate media

► The importance of MOSFET gate media

Mosfets are key components in modern integrated circuits,and their performance largely depends on the quality and characteristics of the gate medium.The gate medium needs to provide good insulation properties while reducing gate leakage to improve the stability and reliability of the device.

 Application of CVD tube furnace in the preparation of gate media

1) Material selection:

Traditionally,the main gate dielectric material is silicon oxide (SiO₂).However,with the continuous reduction of technical nodes,silicon oxide has been unable to meet the requirements of gate leakage.

Therefore,high-K gate dielectric materials (such as hafnium oxide,zirconium oxide,etc.) are introduced to replace silicon oxide.These materials have a higher dielectric constant,which can reduce the physical thickness of the gate medium while maintaining the same capacitance,thus reducing gate leakage.

2) Deposition process:

CVD tube furnaces provide an efficient deposition method for forming high-quality,high-K grid dielectric films on the grid.

During deposition,gaseous compounds or elements containing high k medium elements are introduced into the reaction chamber.These reactants react biochemically at high temperatures to produce the desired thin film material and deposit it on the gate.

Process control:

In order to obtain high-quality grid dielectric films,it is necessary to precisely control the process parameters of the equipment,such as temperature,atmosphere,reaction time and pressure.

The precise control of these parameters ensures the uniformity,density and purity of the film,thereby improving the performance and reliability of the MOSFET.

Advantages of CVD tube furnace for preparing gate media
 
 

High accuracy

The device allows for precise process control,resulting in the preparation of grid dielectric films with specific thickness,composition and structure.

 
 
 

High purity

Due to the high-temperature decomposition and chemical reaction of the reactants in the reaction chamber,only the required elements will be deposited on the gate to form a film,so a high purity gate medium can be obtained.

 
 
 

Good bonding force

By optimizing the deposition conditions and post-processing steps,the gate dielectric film with good bonding force can be obtained,thus improving the stability and reliability of the device.

 

► Practical applications and challenges

In practical applications,the gate media prepared by the device has been widely used in advanced MOSFET manufacturing.However,with the continuous reduction of technical nodes,the requirements for grid media are becoming higher and higher.For example,lower leakage current,higher dielectric constant and better thermal stability are required.Therefore,researchers need to constantly explore new materials and processes to meet these challenges.

 

Future Trends

● Advanced Process Control and Automation

Future CVD tube furnaces will likely incorporate more advanced process control and automation technologies. This includes the use of artificial intelligence and machine learning algorithms to optimize the deposition parameters in real - time, improving the film quality and reducing the process variability. Automated handling systems for substrates and precursor gases will also increase the efficiency and reproducibility of the process.

● Development of New Precursor Materials

The development of new precursor materials with improved properties, such as higher vapor pressures, better stability, and lower toxicity, will expand the range of materials that can be deposited using CVD tube furnaces. These new precursors will also enable the deposition of materials with novel properties and functionalities.

● Integration with Other Technologies

CVD tube furnaces may be integrated with other technologies, such as atomic layer deposition (ALD) or nanoimprint lithography, to create hybrid deposition and patterning processes. This will allow for the fabrication of complex nanostructures and devices with even higher precision and performance.

 

 

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