Electric Box Furnace
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Electric Box Furnace

1.Lab Tubular Furnace Equipment:Φ25mm-Φ100mm
2.Lab Box Furnace Equipment:1L-36L
3.Working Temperature can reach 1200℃-1700℃
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Description

Technical Parameters

An electric box furnace, also commonly referred to as a box-type electric furnace or an electric chamber furnace, is a versatile and widely used industrial heating equipment. It derives its name from its box-like structure, which typically comprises a sturdy steel shell encapsulating the heating chamber. This design allows for efficient and uniform heating of materials within a controlled environment.

They are employed across various industries for applications including sintering, annealing, hardening, brazing, and tempering of metals and alloys. And also used in ceramic manufacturing for firing processes, as well as in research and development for material science experiments requiring precise temperature control.

One of the key advantages is their ability to offer a clean, non-contaminating heat source, making them ideal for applications where material purity is critical. Additionally, modern box furnaces often come equipped with advanced control systems featuring PID (Proportional-Integral-Derivative) controllers for automated temperature regulation, data logging capabilities, and safety features like over-temperature protection and emergency shut-off mechanisms.

 

Specifications

 

Tube Furnace Specifications | Shaanxi Achieve chem-tech

Box Furnace Specifications | Shaanxi Achieve chem-tech

 

Applications

 

The electric box furnace stands as a linchpin in semiconductor manufacturing, underpinning the intricate processes that transform raw silicon wafers into high-performance electronic components. Its significance in the industry is underscored by its capacity to deliver the precision and consistency necessary for modern semiconductor fabrication, especially as the sector advances toward increasingly minute feature sizes and heightened device capabilities.

As the semiconductor industry continues its relentless pursuit of Moore's Law, pushing the boundaries of what is physically and economically feasible, it will remain at the forefront of process innovation. Ongoing advancements in furnace design, such as improved heating element materials, enhanced insulation, and smarter control algorithms, will further elevate its capabilities. Additionally, the integration with in-situ monitoring and feedback systems could enable real-time process adjustments, heralding a new era of adaptive manufacturing.

Electric Box Furnace Applications | Shaanxi Achieve chem-tech

Electric Box Furnace Applications | Shaanxi Achieve chem-tech

in Diffusion Process

 

Function & Purpose

 

In the Diffusion process, it is used to create a controlled environment where impurities are introduced into a semiconductor wafer. These impurities, typically dopants like boron, phosphorus, or arsenic, are crucial in determining the electrical properties of the wafer. By precisely controlling the diffusion of these impurities, manufacturers can adjust the conductivity, resistivity, and other critical electrical parameters of the semiconductor material.

It achieves this by heating the wafer to a specific temperature and maintaining it at that temperature for a predetermined period. The high temperature accelerates the diffusion of impurities into the wafer, a process that would occur naturally but at a much slower rate. The furnace also provides a uniform heating environment, ensuring that the impurities diffuse evenly throughout the wafer.

This precision in temperature control and uniformity is critical in achieving consistent and predictable diffusion results. It allows manufacturers to produce semiconductor wafers with precise electrical properties, which are essential for the performance and reliability of electronic devices.

 

Operational Principles

 

The furnace is heated to a high temperature, typically ranging from a few hundred to a thousand degrees Celsius, depending on the specific dopant and the desired diffusion profile. This high temperature creates a saturated impurity vapor within the furnace tube, where the dopant material is in equilibrium with its vapor phase.

The semiconductor wafer is then placed inside the furnace tube, usually in a quartz boat or similar holder, and exposed to the saturated impurity vapor. The impurities in the vapor phase are then driven into the wafer through the process of solid-state diffusion. Diffusion is a natural process that occurs when there is a concentration gradient of a substance within a solid, but it is extremely slow at room temperature. Within the furnace, the high temperature significantly accelerates the diffusion rate, allowing the impurities to penetrate the wafer in a matter of hours or even minutes rather than billions of years.

The rate and depth of diffusion are controlled by several factors, including the temperature, the dopant concentration in the vapor phase, and the duration of exposure. By precisely controlling these parameters, manufacturers can achieve a specific dopant profile within the wafer, which determines its electrical properties.

It's worth noting that the Diffusion process is just one of many steps in the production of semiconductor devices. Other critical processes include photolithography, etching, ion implantation, and annealing, among others. However, the Diffusion process is particularly important because it directly affects the electrical properties of the semiconductor material, which ultimately determines the performance of the final electronic device.

Overall, it plays a critical role in the Diffusion process by providing a controlled environment where impurities can be introduced into the semiconductor wafer with precision and uniformity. This allows manufacturers to produce high-quality semiconductor wafers with the desired electrical properties, which are essential for the performance and reliability of electronic devices.

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in Annealing Process

 

Function & Purpose

 

Annealing is a thermal treatment process that is commonly conducted within the electric box furnace, similar to the Diffusion process. Its primary purposes are to activate impurities, repair damage caused by ion implantation, and improve the overall quality of the semiconductor wafer.

Activating Impurities

During the Diffusion process, impurities are introduced into the semiconductor wafer to adjust its electrical properties. However, some of these impurities may not be in an active or electrically effective state immediately after Diffusion. Annealing serves to activate these impurities by promoting their incorporation into the crystalline structure of the semiconductor material. This activation process enhances the electrical properties of the wafer and ensures that the dopant atoms are properly integrated into the lattice.

Repairing Damage

Ion implantation is another critical process in semiconductor manufacturing, where dopant ions are accelerated into the wafer to create a specific dopant profile. However, this process can cause significant damage to the crystalline structure of the material. Annealing helps to repair this damage by promoting the realignment of the atoms in the lattice and restoring the crystallinity of the material. This improves the electrical properties of the wafer and enhances its performance.

Improving Quality

Annealing also serves to improve the overall quality of the semiconductor wafer by reducing defects and improving uniformity. The high temperature of the furnace helps to eliminate residual stresses and improve the crystallographic structure of the material. This results in a more reliable and consistent semiconductor material that is better suited for use in electronic devices.

 

Overall, Annealing is a critical step in the production of semiconductor devices, as it helps to ensure that the impurities introduced during the Diffusion process are properly activated and that any damage caused by ion implantation is repaired. This improves the electrical properties and overall quality of the semiconductor wafer, making it more suitable for use in electronic devices.

 

It's worth noting that Annealing is just one of many steps in the production of semiconductor devices, and it is often conducted in conjunction with other processes such as photolithography, etching, and Diffusion. However, its role in activating impurities, repairing damage, and improving quality makes it an essential step in the production of high-quality semiconductor materials.

 

Operational Principles

 

During the annealing process, the wafer is heated to a specific temperature within the furnace and held at that temperature for a predetermined period. This temperature and duration are carefully controlled to ensure that the desired effects are achieved without causing excessive damage to the wafer.

Heating and Holding

The wafer is placed inside the furnace, which is then heated to the desired annealing temperature. This temperature is typically in the range of several hundred to a thousand degrees Celsius, depending on the specific material and process requirements. The wafer is then held at this temperature for a specific amount of time, which allows the annealing process to take place.

Activation of Impurities

As the wafer is heated, the dopant impurities that were introduced during previous processes (such as Diffusion or ion implantation) become more mobile. They move into lattice positions within the semiconductor material, where they can generate free carriers (electrons or holes). These free carriers enhance the electrical conductivity of the material, making it more suitable for use in electronic devices.

Repair of Damage

The annealing process also helps to repair damage that was caused by ion implantation. During ion implantation, high-energy ions are accelerated into the wafer, causing displacement of atoms and creating defects in the crystalline structure. Annealing promotes the realignment of these atoms and the restoration of the crystallinity of the material. This reduces the number of defects and improves the electrical properties of the wafer.

 

Overall, the annealing process is essential for achieving the desired electrical properties in semiconductor wafers. It helps to activate dopant impurities, repair damage caused by ion implantation, and improve the overall quality of the material. By carefully controlling the temperature and duration of the annealing process, manufacturers can optimize the electrical properties of the wafers and produce high-quality semiconductor devices.

 

Types of Annealing

 

Furnace Annealing

 

 

A traditional method where the wafer is heated within a furnace chamber.

Rapid Annealing

 

 

More advanced techniques such as pulse laser annealing, continuous-wave laser annealing, and annealing using incoherent broadband light sources (e.g., halogen lamps, arc lamps, graphite heaters, infrared equipment).

 

Design Features

 

Firstly, electric box furnaces produce zero emissions during operation, unlike furnaces that rely on coal, oil, or natural gas, which release harmful pollutants such as carbon dioxide (CO2), sulfur dioxide (SO2), and nitrogen oxides (NOx). This makes it a critical tool in the fight against climate change and air pollution, as it contributes to reducing greenhouse gas emissions and mitigating their impact on global warming.

Secondly, the efficiency is noteworthy. Modern designs incorporate advanced insulation materials and precise temperature control mechanisms, ensuring minimal heat loss and maximizing energy utilization. This efficiency translates into lower energy consumption compared to older or less sophisticated heating technologies, thereby reducing overall carbon footprint and operational costs.

Moreover, electric power, as the energy source for these furnaces, is increasingly being sourced from renewable and sustainable means like solar, wind, and hydroelectric power. As the global transition to renewable energy accelerates, the environmental benefits of using them become even more pronounced, as they can potentially operate entirely on clean, green energy.

Additionally, they facilitate material recycling and waste management processes in various industries. For instance, they are used for melting scrap metals, thus conserving virgin raw materials and reducing mining activities, which are often energy-intensive and environmentally disruptive.

The electric box furnace is more than just a piece of equipment in the semiconductor fabrication line; it is a guardian of process integrity and a catalyst for innovation. Its ability to provide precise, uniform, and adaptable thermal processing is indispensable for producing the advanced semiconductor devices that power our digital world. As the industry forges ahead, it will undoubtedly evolve, continuing to play a pivotal role in shaping the future of electronics.

 

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